High Performance Polymer Nanowire Field-Effect Transistors with Distinct Molecular Orientations
نویسندگان
چکیده
منابع مشابه
High-performance nanowire field-effect transistors
Semiconductor nanowires (NWs) 1, 2 have attracted significant interest because of their potential for a variety of different applications, including logic and memory circuitry, photonics devices, and chemical and biomolecular sensors. 3–6 Although many different types of semiconductor NW have been investigated, silicon NWs have become prototypical nanowires because they can be readily prepared,...
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Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22033, Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, School of Physics, Astronomy, and Computational Sciences, George Mason University, Fairfax, VA 22033, Materials Science and Engineering Division, National Institute of Standards an...
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Although wrap-gated nanowire field-effect-transistors (NWFETs) have been explored as an ideal electronic device geometry for low-power and high-frequency applications, further performance enhancement and practical implementation are still suffering from electron scattering on nanowire surface/interface traps between the nanowire channel and gate dielectric as well as the complicated device fabr...
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We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary m...
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Single-crystal InAs nanowires (NWs) are synthesized using metal-organic chemical vapor deposition (MOCVD) and fabricated into NW field-effect transistors (NWFETs) on a SiO(2)/n(+)-Si substrate with a global n(+)-Si back-gate and sputtered SiO(x)/Au underlap top-gate. For top-gate NWFETs, we have developed a model that allows accurate estimation of characteristic NW parameters, including carrier...
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ژورنال
عنوان ژورنال: Advanced Materials
سال: 2015
ISSN: 0935-9648
DOI: 10.1002/adma.201502617